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Same model may have multiple batches, images only for reference.
IXTV30N50P Real Image
Same model may have multiple batches, images only for reference.

IXTV30N50P

Part No IXTV30N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 30A PLUS220 / N-Channel 500 V 30A (Tc) 460W (Tc) Through Hole PLUS220
Datasheet
IXTV30N50P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 25 V
Power Dissipation (Max) 460W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV30
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346690-IXTV30N50P
Ultra Librarian 3D Model Ultra Librarian IXTV30N50P CAD Model

Description

The IXTV30N50P is a N-channel MOSFET transistor designed for use in Discrete Semiconductor Products. IXTV30N50P.

  • Drain to Source Voltage (Vdss): 500 V
  • Power Dissipation (Max): 460W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-220-3, Short Tab
  • Series: PolarHV™
  • Gate to Source Voltage (Vgs): ±30V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Current - Continuous Drain (Id): 30A (Tc)
  • Rds On (Max): 200mOhm @ 15A, 10V

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