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Same model may have multiple batches, images only for reference.
IXTX110N20L2 Real Image
Same model may have multiple batches, images only for reference.

IXTX110N20L2

Part No IXTX110N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 110A PLUS247-3 / N-Channel 200 V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3
Datasheet
IXTX110N20L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 500 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX110
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1337737-IXTX110N20L2
Ultra Librarian 3D Model Ultra Librarian IXTX110N20L2 CAD Model

Description

The IXTX110N20L2 is a N-channel MOSFET transistor from IXYS. The manufacturer is IXYS, and the product is IXTX110N20L2.

  • Drain to Source Voltage: 200 V
  • Continuous Drain Current: 110A @ 25°C
  • On-Resistance: 24mOhm @ 55A and 10V
  • Gate Charge: 500 nC @ 10V
  • Input Capacitance: 23000 pF @ 25V
  • Package: TO-247-3 variant
  • Temperature Range: -55°C to 150°C
  • RoHS3 Compliant: Yes

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