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Same model may have multiple batches, images only for reference.
IXTX5N250 Real Image
Same model may have multiple batches, images only for reference.

IXTX5N250

Part No IXTX5N250
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 2500V 5A PLUS247-3  /  N-Channel 2500 V 5A (Tc) 960W (Tc) Through Hole PLUS247™-3
Datasheet
IXTX5N250 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8560 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1202850-IXTX5N250
Ultra Librarian 3D Model Ultra Librarian IXTX5N250 CAD Model

Description

The IXTX5N250 is an N-channel MOSFET from IXYS.

  • Category: Transistors - FETs, MOSFETs - Single
  • Drain to Source Voltage: 2500V
  • Continuous Drain Current: 5A @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Power Dissipation (Max): 960W (Tc)
  • Mounting Type: Through Hole
  • Package/Case: TO-247-3
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
  • Temperature Range: -55°C ~ 150°C (TJ)

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