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Same model may have multiple batches, images only for reference.
IXTY10P15T Real Image
Same model may have multiple batches, images only for reference.

IXTY10P15T

Part No IXTY10P15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 10A TO252 / P-Channel 150 V 10A (Tc) 83W (Tc) Surface Mount TO-252AA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number IXTY10
Standard Package 70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346729-IXTY10P15T
Ultra Librarian 3D Model Ultra Librarian IXTY10P15T CAD Model

Description

The IXYS IXTY10P15T is a P-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Drain-Source Voltage: 150V
  • Continuous Drain Current: 10A @ 25°C
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: Surface
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate Charge: 36 nC @ 10V
  • Input Capacitance: 2210 pF @ 25V
  • Power Dissipation: 83W (Tc)
  • Series: TrenchP™

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4211 $58.1587
42+ $2.8071 $117.8982
64+ $2.7195 $174.0480
88+ $2.6317 $231.5896
114+ $2.5440 $290.0160
152+ $2.2808 $346.6816
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MOQ: 17 pcs
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