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IXXN110N65C4H1 Real Image
Same model may have multiple batches, images only for reference.

IXXN110N65C4H1

Part No IXXN110N65C4H1
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT MOD 650V 210A 750W SOT227B / IGBT Module PT Single 650 V 210 A 750 W Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr IXYS
Series XPT™, GenX4™
Package Tube
IGBT Type PT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 210 A
Power - Max 750 W
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 110A
Current - Collector Cutoff (Max) 50 µA
Input Capacitance (Cies) @ Vce 3.69 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B
Base Product Number IXXN110
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1351845-IXXN110N65C4H1
Ultra Librarian 3D Model Ultra Librarian IXXN110N65C4H1 CAD Model

Description

The IXXN110N65C4H1 is an IGBT transistor module from IXYS, designed for use in IGBT modules.

  • Voltage-Collector Emitter Breakdown (Max): 650V
  • Current-Collector Cutoff (Max): 50μA
  • Mounting Type: Chassis Mount
  • Package/Case: SOT-227-4, miniBLOC
  • Temperature Range: -55°C to 175°C (TJ)
  • Current-Collector (Ic) (Max): 210A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
  • Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V

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