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Same model may have multiple batches, images only for reference.
VMK90-02T2 Real Image
Same model may have multiple batches, images only for reference.

VMK90-02T2

Part No VMK90-02T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 200V 83A TO-240AA
Datasheet
VMK90-02T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 83A
Maximum Rds On at Id,Vgs 25 mOhm @ 500mA, 10V
Gate-Source Threshold Voltage 4V @ 3mA
Max Gate Charge 450nC @ 10V
Max Input Capacitance 15000pF @ 25V
Maximum Power Dissipation 380W
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package TO-240AA
Win Source Part Number 1077602-VMK90-02T2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 6
Ultra Librarian 3D Model Ultra Librarian VMK90-02T2 CAD Model

Description

The VMK90-02T2 is a dual N-Channel FET that is designed with standard features.

  • Maximum Power Dissipation: 380W
  • Mounting: on a chassis
  • Operating Temperature Range: -40°C to 150°C
  • Package: TO-240AA case
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 83A @ 25°C
  • Max Gate Charge: 450nC @ 10V
  • Max Input Capacitance: 15000pF @ 25V
  • Maximum Rds On: 25 mOhm @ 500mA, 10V
  • Ideal For: discrete semiconductor products
  • Status: not for new designs

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