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Same model may have multiple batches, images only for reference.
S8050-C-BP Real Image
Same model may have multiple batches, images only for reference.

S8050-C-BP

Part No S8050-C-BP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Datasheet
S8050-C-BP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 1V
Power - Max 625 mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Other Names 353-S8050-C-BP
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278664-S8050-C-BP
Ultra Librarian 3D Model Ultra Librarian S8050-C-BP CAD Model

Description

The S8050-C-BP is an NPN bipolar transistor with a collector emitter breakdown voltage of 25V and a maximum power of 625mW.

  • Collector Emitter Breakdown Voltage: 25V
  • Maximum Power: 625mW
  • Current Collector (Ic) (Max): 500mA
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
  • Frequency Transition: 150MHz
  • Package Type: TO-92
  • Operating Temperature: -55°C to 150°C (TJ)
  • Standard Package: 1,000
  • Suitable for: Discrete semiconductor products and transistors - bipolar (BJT) - single

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