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2N5302

Part No 2N5302
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description NPN TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 30 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 6A, 30A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 15A, 2V
Power - Max 5 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204AD (TO-3)
Base Product Number 2N5302
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541258-2N5302
Ultra Librarian 3D Model Ultra Librarian 2N5302 CAD Model

Description

Product Overview: 2N5302 NPN Power Transistor by Microchip Technology

The 2N5302 is a robust NPN bipolar junction transistor (BJT) designed and manufactured by Microchip Technology, a leader in microcontroller, mixed-signal, analog, and Flash-IP solutions. This power transistor is engineered to handle high-power applications and is widely used in a variety of electronic circuits for switching and amplification purposes.

Key Features

  • High Voltage Capabilities: The 2N5302 is capable of withstanding high voltages, making it suitable for use in power supply circuits and other high voltage applications.
  • High Current Handling: With the ability to manage significant current loads, this transistor is ideal for driving high-power components such as motors, solenoids, and other inductive loads.
  • Low Saturation Voltage: The low V<sub>CE(sat) characteristic of the 2N5302 ensures efficient operation with minimal power loss, contributing to better energy efficiency in electronic designs.
  • Robust Construction: Built to endure tough conditions, the 2N5302 is encapsulated in a TO-3 package, known for its high power dissipation and durability.

Applications

The 2N5302 has a wide range of applications across various sectors due to its high power and current handling capabilities. It is commonly used in:

  • Linear and switching power supplies
  • Motor control circuits
  • Audio amplifiers
  • Regulation systems
  • Inverters
  • Other power switching applications

Technical Specifications

The 2N5302 boasts impressive technical specifications that make it a reliable choice for power applications:

  • Collector-Emitter Voltage (V<sub>CEO): 100V
  • Collector Base Voltage (V<sub>CBO): 120V
  • Emitter Base Voltage (V<sub>EBO): 7V
  • Collector Current - Continuous (I<sub>C): 30A
  • Total Device Dissipation (P<sub>D): 150W
  • Operating and Storage Junction Temperature Range: -65 to +200°C

With its high-performance characteristics, the 2N5302 from Microchip Technology is an excellent choice for designers looking to incorporate a reliable power transistor into their high-demand applications.

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