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2N6660

Part No 2N6660
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag / MOSFET N-CH 60V 0.41A TO39-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 50pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-39
Dimension TO-205AD, TO-39-3 Metal Can
Win Source Part Number 053861-2N6660
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial, Motor Drive & Control
Family Name 2N6660
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian 2N6660 CAD Model

Description

Microchip Technology's 2N6660 N-Channel MOSFET

The 2N6660 is a high-performance N-Channel MOSFET produced by the renowned manufacturer, Microchip Technology. This particular MOSFET is well-known among professionals for its efficient voltage control and is widely utilized in various electronic applications ranging from power management to signal processing.

With its compact design, the 2N6660 offers superb power density, making it an ideal choice for space-constrained applications. It is designed to handle high-speed switching operations while maintaining low power loss, thus ensuring energy-efficient performance in your circuit designs.

Key Features:

  • Voltage Control: The 2N6660 operates with a gate-source voltage (Vgs) that is suitable for a wide array of applications, providing precise control over the power flow through the device.
  • Drain-Source Voltage: It features a high drain-source voltage (Vds) capability, which allows it to manage higher voltages without compromising performance.
  • Current Capacity: This MOSFET has an impressive continuous drain current (Id) rating, enabling it to handle significant current levels for its size.
  • Low On-Resistance: The low on-state resistance (Rds(on)) of the 2N6660 minimizes power loss during operation, enhancing the overall efficiency of the electronic system.
  • Thermal Performance: It boasts a robust thermal performance, which is critical for reliability and longevity, especially in applications where the MOSFET is expected to operate under high-temperature conditions.

The 2N6660 is packaged in a TO-18 metal can, which provides excellent protection against environmental factors, as well as mechanical durability. This packaging also aids in heat dissipation, further contributing to the device's thermal stability.

Whether you're designing power supplies, motor controllers, or working on switching regulators, the 2N6660 from Microchip Technology is a reliable and efficient choice that offers both performance and quality. Its ability to switch high voltages and currents efficiently makes it an essential component for designers looking to create compact, high-performance electronic systems.

For detailed specifications and application notes, visit Microchip Technology's official website or consult the 2N6660 datasheet. This will provide you with in-depth information to ensure that this MOSFET meets your design requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.6363 $67.9089
6+ $18.5734 $111.4404
9+ $17.9930 $161.9370
12+ $17.4126 $208.9512
15+ $16.8322 $252.4830
20+ $15.0909 $301.8180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,941 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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