Microchip Technology PIC24LC16B-I/SN EEPROM
The PIC24LC16B-I/SN from Microchip Technology is a high-performance, serial Electrically Erasable Programmable Read-Only Memory (EEPROM) device that offers a robust storage solution for advanced microcontroller-based systems. This integrated circuit comes in a small-outline, 8-pin package, making it ideal for space-constrained applications that require reliable data retention and efficient data handling.
With a storage capacity of 16 Kbits, the PIC24LC16B-I/SN provides ample room for user data, configuration settings, or small application code segments. It operates under a wide voltage range of 2.5V to 5.5V, ensuring compatibility with a variety of logic levels and making it suitable for both commercial and industrial applications.
This EEPROM device features a I²C/SMBus™ compatible interface, which allows for easy integration into most microcontroller-based systems. The I²C interface supports standard, fast, and high-speed modes, making it a versatile choice for different communication requirements. Additionally, the PIC24LC16B-I/SN supports a maximum clock frequency of 400 kHz, enabling quick data transfers and minimizing the time spent on memory operations.
One of the key advantages of the PIC24LC16B-I/SN is its built-in error correction functionality, which enhances data reliability and integrity. The device also features write protection mechanisms, including hardware write protect pins and software write protection, to prevent accidental data overwrites or corruption.
Designed for durability, the PIC24LC16B-I/SN can withstand harsh environments, with an operational temperature range of -40°C to +85°C. This makes it a suitable choice for automotive, industrial, and outdoor applications where temperature extremes are common.
Overall, the Microchip Technology PIC24LC16B-I/SN EEPROM is a compact, high-performance memory solution that offers a blend of reliability, flexibility, and ease of use for designers and engineers looking to enhance their systems with non-volatile memory storage.