The MT28F400B5WP-8B is a 4 Mbit (512K x 8) parallel NOR Flash memory device manufactured by Micron Technology Inc. This flash memory is designed for embedded systems requiring non-volatile storage for code and data. Its key features include fast read access times, low power consumption, and high endurance, making it suitable for a variety of applications.

Applications

• Embedded systems
• Industrial control systems
• Networking equipment
• Consumer electronics
• Medical devices
• Automotive electronics

Features

• Fast Read Access Time: Typically features read access times in the range of 70-120 ns.
• Low Power Consumption: Operates on a single power supply voltage (e.g., 3.0V or 5.0V) with low active and standby currents.
• High Endurance: Supports a high number of program/erase cycles.
• Parallel Interface: Simplifies interfacing with microprocessors and microcontrollers.
• Sector Erase Capability: Allows for selective erasure of memory sectors.
• Available in various package options: Including TSOP and PLCC packages.

Benefits

• Improved System Performance: Fast read access times reduce latency and improve overall system responsiveness.
• Reduced Power Consumption: Low power operation extends battery life in portable devices and reduces energy costs.
• High Reliability: Robust design and manufacturing processes ensure reliable operation in demanding environments.
• Simplified System Design: Parallel interface simplifies integration and reduces development time.
• Flexibility: Sector erase capability allows for efficient memory management.

Additional Details

The MT28F400B5WP-8B utilizes CMOS technology to achieve high speed and low power. The memory array is organized to allow for easy data access and manipulation. It supports standard flash memory operations such as read, write, and erase cycles, controlled by address, data, and control signals. Detailed specifications can be found in the Micron product datasheet, including timing diagrams, electrical characteristics, and package dimensions.