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APT1001R1BN

Part No APT1001R1BN
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 10.5A TO247AD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 5.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Dimension TO-247-3
Win Source Part Number 224187-APT1001R1BN
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT1001R1BN CAD Model

Description

APT1001R1BN Description

The APT1001R1BN is a sophisticated power transistor designed to offer superior performance over a wide range of applications. It is especially crafted for those requiring long-term reliability and efficiency in power conversion and control systems.

  • Voltage Rating: 1000V
  • Current Rating: 1.1A
  • Operating Temperature: -55°C to 150°C
  • Packaging: TO-220

Applications

  • HVAC Systems
  • DC-DC Converters
  • Industrial Power Supplies
  • Lighting Ballasts

Features and Benefits

  • Efficient thermal management for longevity
  • Fast switching speed to improve performance
  • Minimal power loss for better efficiency
  • Durable construction for harsh environments

Additional Details: APT1001R1BN's design focuses on reducing energy consumption while maintaining high efficiency, making it suitable for green energy applications.

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