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APT12M80B

Name: APT12M80B
Brand: Microsemi Corporation
SKU: 563924
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	APT12M80B
Manufacturer	Microsemi Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-Channel MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Series	POWER MOS 8
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	800V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs	80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	2470pF @ 25V
Vgs (Maximum)	±30V
Power Dissipation (Maximum)	335W (Tc)
Rds On (Maximum) @ Id, Vgs	800 mOhm @ 6A, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	TO-247 [B]
Package	TO-247-3
Win Source Part Number	1146612-APT12M80B
Manufacturer Homepage	www.microsemi.com
Popularity	Medium
Supply and Demand Status	Limited
Family Name	APT12M80B
Introduction Date	November 15, 2007
ECCN	EAR99
Estimated EOL Date	2024
Ultra Librarian 3D Model	Ultra Librarian APT12M80B CAD Model

Alternative Products

Description

The Microsemi Corporation APT12M80B is a POWER MOS 8 series MOSFET with a Win Source part number of 1146612.

Mounting Style: Through-Hole
Package: TO-247-3
Channel Type: N
Drain-Source Voltage: 800V
Vgs Maximum: ±30V
Power Dissipation: 335W (Tc)
Input Capacitance: 2470pF @ 25V
Gate Charge: 80nC @ 10V
Manufacturer's Homepage: www.microsemi.com
Manufacturer Package: TO-247 [B]
Application: Discrete semiconductor products category that require a current of 13A (Tc) @ 25°C
Introduction Date: November 15, 2007
Estimated EOL Date: 2024
Supply and Demand Status: Limited

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