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Same model may have multiple batches, images only for reference.
APT15GN120KG Real Image
Same model may have multiple batches, images only for reference.

APT15GN120KG

Part No APT15GN120KG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 45A 195W TO220
Datasheet
APT15GN120KG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Microsemi Corporation
Series POWER MOS 7®
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 45 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Power - Max 195 W
Switching Energy 410µJ (on), 950µJ (off)
Input Type Standard
Gate Charge 90 nC
Td (on/off) @ 25°C 10ns/150ns
Test Condition 800V, 15A, 4.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220 [K]
Base Product Number APT15GN120
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 563950-APT15GN120KG
Ultra Librarian 3D Model Ultra Librarian APT15GN120KG CAD Model

Description

The APT15GN120KG is a single IGBT (Insulated Gate Bipolar Transistor) from the POWER MOS 7 series by Microsemi Corporation.

  • Power Rating: 195W
  • Technology: Trench Field Stop
  • Voltage Breakdown: 1200V
  • Maximum Collector Current: 45A
  • Vce(on): 2.1V @ 15V, 15A
  • Mounting Type: Through-Hole
  • Temperature Range: -55°C ~ 150°C
  • Status: Obsolete

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