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Same model may have multiple batches, images only for reference.
APT30M70BVFRG Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT30M70BVFRG

Part No APT30M70BVFRG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description Power Semiconductors Power Modules RF Power MOSFETs
Datasheet
APT30M70BVFRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS V
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5870pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 370W (Tc)
Rds On (Maximum) @ Id, Vgs 70 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 1146742-APT30M70BVFRG
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT30M70BVFR
Introduction Date December 04, 1998
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT30M70BVFRG CAD Model

Description

The Microsemi Corporation APT30M70BVFRG MOSFET is a through-hole mounting component that offers reliable and efficient performance.

  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247-3
  • Power Dissipation: 370W (Tc)
  • Alternative Part Cross-Reference: IXTH40N30SN, IRFP4242PBF, and FKP280A

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