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Same model may have multiple batches, images only for reference.
APT4F120K Real Image
Same model may have multiple batches, images only for reference.

APT4F120K

Part No APT4F120K
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 4A TO-220
Datasheet
APT4F120K Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 500μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1385pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 225W (Tc)
Maximum Rds On at Id,Vgs 4.6 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1018062-APT4F120K
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT4F120K CAD Model

Description

The Microsemi Corporation 1018062-APT4F120K is a MOSFET transistor with an N-Channel polarity.

  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 4A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 4.6 Ohm @ 2A, 10V
  • Case Package: TO-220
  • Mounting: through-hole
  • Supply and Demand Status: balanced

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