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Same model may have multiple batches, images only for reference.
APT56M50B2 Real Image
Same model may have multiple batches, images only for reference.

APT56M50B2

Part No APT56M50B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 56A T-MAX
Datasheet
APT56M50B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 2.5mA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 8800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 780W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package T-MAX
Dimension TO-247-3 Variant
Win Source Part Number 1018082-APT56M50B2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT56M50B2 CAD Model

Description

The APT56M50B2 is a N-channel MOSFET manufactured by Microsemi Corporation.

  • Maximum Power Dissipation: 780W @ Tc
  • Package: T-MAX
  • Mounting Style: through-hole
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 220nC @ 10V
  • Rds On Value: 100 mOhm @ 28A and 10V
  • Drive Voltage: 10V
  • Continuous Drain Current: 56A @ 25°C
  • Product Category: Discrete Semiconductor Products
  • Operating Temperature Range: -55°C to 150°C (TJ)

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