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Same model may have multiple batches, images only for reference.
JAN2N1711 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JAN2N1711

Part No JAN2N1711
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN LOW POWER SILICON TRANSISTOR | TRANS NPN 30V 0.5A TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 30V
Vce Saturation (Maximum) at Ib, Ic 1.5V at 15mA, 150mA
Current - Collector Cutoff (Maximum) 10nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 10V
Maximum Power 800mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191375-JAN2N1711
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JAN2N1711 CAD Model

Description

The JAN2N1711 from Microsemi Corporation is an NPN transistor that is designed for use in a range of discrete semiconductor applications.

  • Maximum Collector Current: 500mA
  • Maximum Collector-Emitter Voltage: 30V
  • Package: TO-5-3 metal can
  • Operating Temperature Range: -65°C to 200°C
  • Features: High DC current gain and low collector-emitter saturation voltage

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