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JAN2N6849

Part No JAN2N6849
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.5A TO-39
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34.8nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 800mW (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-39
Dimension TO-205AF Metal Can
Win Source Part Number 153130-JAN2N6849
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N6849 CAD Model

Description

The JAN2N6849 is a P-Channel MOSFET transistor manufactured by Microsemi Corporation.

  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 34.8nC @ 10V
  • Maximum Rds On @ Id,Vgs: 320 mOhm @ 6.5A, 10V
  • Power Dissipation: 800mW (Ta), 25W (Tc)
  • Mounting: Through hole
  • Package: TO-39
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-205AF Metal Can
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supplied in: Bulk
  • Quantity per Package: 1

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