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JANTXV2N5662 Real Image
Same model may have multiple batches, images only for reference.

JANTXV2N5662

Part No JANTXV2N5662
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN POWER SILICON TRANSISTOR | TRANS NPN 200V 2A TO-5
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 200V
Vce Saturation (Maximum) at Ib, Ic 800mV at 400mA, 2A
Current - Collector Cutoff (Maximum) 200nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 40 at 500mA, 5V
Maximum Power 1W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191559-JANTXV2N5662
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTXV2N5662 CAD Model

Description

The Microsemi Corporation JANTXV2N5662 is a through-hole transistor type NPN component that comes in a TO-5-3 Metal Can package.

  • Manufacturer Pack Quantity: 1
  • Operating Temperature Range: -65°C to 200°C
  • Maximum Collector Current: 2A
  • Maximum Voltage: 200V (Collector-Emitter Breakdown)
  • Maximum Collector Cutoff: 200nA
  • DC Current Gain: 40 @ 500mA, 5V

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