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JANTXV2N6758
Same model may have multiple batches, images only for reference.

JANTXV2N6758

Part No JANTXV2N6758
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A TO204AA  /  N-Channel 200 V 9A (Tc) 4W (Ta), 75W (Tc) Through Hole TO-204AA (TO-3)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Microsemi Corporation
Series Military, MIL-PRF-19500/542
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 490mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 4W (Ta), 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA (TO-3)
Package / Case TO-204AA, TO-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 150-JANTXV2N6758,JANTXV2N6758-MIL,JANTXV2N6758-ND
Standard Package 1
Win Source Part Number 1036426-JANTXV2N6758
Ultra Librarian 3D Model Ultra Librarian JANTXV2N6758 CAD Model

Description

The 1036426-JANTXV2N6758 is an N-Channel MOSFET transistor type electronic component from Microsemi Corporation that is designed for use in discrete semiconductor products.

  • Package: Through-hole
  • Package/Case: TO-204AA (TO-3)
  • Maximum Drain-Source Voltage: 200V
  • Maximum Continuous Drain Current: 9A @ 25°C
  • Maximum On-Resistance: 490mOhm @ 9A and 10V
  • Status: Obsolete

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