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NDP6060B

Part No NDP6060B
Manufacturer National Semiconductor (TI)
Catalog Custom Parts (N - R)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1176218-NDP6060B
Categories Custom Parts
Manufacturer National Semiconductor (TI)
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDP6060B CAD Model

Description

The NDP6060B is an N-Channel enhancement mode logic level power MOSFET. It is manufactured by National Semiconductor, which is now part of Texas Instruments (TI). This MOSFET is designed for efficient power switching and amplification in various electronic circuits. Its logic-level gate drive makes it compatible with low-voltage logic circuits, simplifying the design process.

Applications:

  • DC-DC Converters: Used as a switching element in DC-DC converters for voltage regulation.
  • Motor Control: Employed in motor control circuits for efficient power delivery to motors.
  • Power Management: Utilized in power management systems for controlling power distribution.
  • Load Switching: Used as a switch for controlling various loads in electronic circuits.
  • LED Lighting: Employed in LED lighting systems for efficient current control.

Features:

  • N-Channel MOSFET: Offers low on-resistance and high current handling capability.
  • Logic Level Gate Drive: Compatible with low-voltage logic circuits (e.g., 5V).
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching.
  • High Current Capability: Can handle significant current levels without overheating.
  • Fast Switching Speed: Enables efficient switching performance.
  • Avalanche Rated: Can withstand transient voltage spikes.

Benefits:

  • Efficient Power Switching: Minimizes power loss and improves overall system efficiency.
  • Simplified Design: Logic-level gate drive simplifies the design process and reduces component count.
  • High Performance: Offers excellent switching performance and high current handling capability.
  • Reliable Operation: Designed for reliable operation in various applications.
  • Cost-Effective: Provides a cost-effective solution for power switching applications.

Technical Specifications:

The NDP6060B typically features a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of around 19A. The on-resistance (RDS(on)) is typically in the range of 0.06 ohms at a gate-source voltage of 5V. The device is typically available in a TO-220 package. It is also RoHS compliant.

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