The 2SA1396 is a PNP silicon epitaxial transistor manufactured by NEC. It's designed for use in audio frequency power amplifier applications. Known for its high collector power dissipation and good linearity, it's a suitable component for audio amplification circuits requiring moderate power output.

Applications

• Audio power amplifiers (Hi-Fi systems, car audio)
• General-purpose amplification
• Driver stages in audio amplifiers
• Switching circuits

Features

• PNP Silicon Epitaxial Transistor
• High Collector Power Dissipation (PC)
• Excellent Linearity
• High Collector Current (IC)
• Low Saturation Voltage

Benefits

• High Power Output: Capable of delivering substantial power to drive speakers or other loads in audio applications.
• Low Distortion: The transistor's excellent linearity ensures minimal distortion in the amplified signal, resulting in high-fidelity audio reproduction.
• Reliable Performance: Robust design and construction guarantee stable operation under various operating conditions.
• Ease of Use: Standard through-hole package simplifies mounting and soldering.
• Versatile Applications: Suitable for a wide range of amplification and switching applications.

Technical Specifications

The 2SA1396 features a collector-emitter voltage (VCEO) typically around -120V, a collector current (IC) rating of -1.5A, and a collector power dissipation (PC) of about 25W. Its current gain (hFE) is typically between 70 and 240, depending on the operating conditions. The transition frequency (fT) is typically around 8 MHz. The device is typically available in a TO-126 type package for through-hole mounting. Always consult the datasheet for accurate and up-to-date specifications.