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Same model may have multiple batches, images only for reference.
2N7002PW,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

2N7002PW,115

Part No 2N7002PW,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.31A SOT323
Datasheet
2N7002PW,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 0.8nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 260mW (Ta)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 1004065-2N7002PW,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002PW,115 CAD Model

Description

The Nexperia USA Inc. 2N7002PW,115 is a N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 260mW (Ta)
  • Continuous Drain Current @ 25°C: 310mA (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 1.6 Ohm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 0.8nC @ 4.5V
  • Maximum Input Capacitance: 50pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: SOT-323-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: Sufficient

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