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BC847BPN,135
Same model may have multiple batches, images only for reference.

BC847BPN,135

Part No BC847BPN,135
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 45V 0.1A 6TSSOP
Datasheet
BC847BPN,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number BC847
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377026-BC847BPN,135
Ultra Librarian 3D Model Ultra Librarian BC847BPN,135 CAD Model

Description

The BC847BPN is a bipolar transistor array integrated circuit (IC) designed for discrete semiconductor applications from Nexperia USA Inc.

  • Series: Automotive, AEC-Q101
  • Maximum Operating Temperature: 150°C
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Packaging: Tape & Reel (TR)
  • Transistor Type: NPN, PNP
  • Ic - Collector Current (Max): 100mA
  • V(BR)CEO - Collector-Emitter Breakdown Voltage: 45V
  • DC Current Gain (hFE) @ Ic, Vce: 200 @ 2mA, 5V
  • Vce Saturation @ Ib, Ic: 300mV @ 5mA, 100mA
  • Frequency - Transition: 100MHz
  • Power - Max: 300mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
860+ $0.0653 $56.1580
2,095+ $0.0535 $112.0825
3,240+ $0.0519 $168.1560
4,465+ $0.0502 $224.1430
5,775+ $0.0485 $280.0875
7,715+ $0.0436 $336.3740
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