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BSP122,115

Part No BSP122,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 0.55A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 750mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024425-BSP122,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP122,115 CAD Model

Description

The BSP122,115 is a P-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia USA Inc. It is designed for load switching and general-purpose amplification applications. This MOSFET offers low on-resistance and fast switching speeds, making it suitable for efficient power control and signal amplification in various electronic circuits.

Applications:

  • Load Switching: Used for controlling power to various loads in electronic systems, such as relays, solenoids, and lamps.
  • High-Side Switching: Employed in high-side switching configurations, where the MOSFET is used to switch the positive supply voltage.
  • Power Management: Integrated into power management circuits for efficient power distribution and control.
  • Amplification: Used in small signal amplification circuits where a P-channel MOSFET is required.
  • DC-DC Conversion: Can be implemented in DC-DC converter circuits for voltage regulation and power conversion.

Features:

  • P-Channel MOSFET: Provides efficient switching capabilities with a P-channel configuration.
  • Low RDS(on): Offers low on-resistance, minimizing power losses during conduction.
  • Fast Switching Speed: Enables rapid switching, reducing switching losses and improving efficiency.
  • Logic Level Compatible: Can be directly driven by logic level signals, simplifying interfacing with microcontrollers and other digital devices.
  • Surface Mount Package: Available in a small surface mount package for efficient PCB assembly.
  • AEC-Q101 Qualified: Meets the stringent AEC-Q101 automotive qualification standards for reliability.

Benefits:

  • Efficient Power Control: Low RDS(on) and fast switching speeds minimize power losses, improving overall system efficiency.
  • Easy to Use: Logic level compatibility simplifies interfacing with digital control circuits.
  • Compact Design: Small surface mount package saves valuable board space.
  • Reliable Performance: AEC-Q101 qualification ensures reliable operation in automotive and other demanding applications.
  • Cost-Effective Solution: Offers a reliable and cost-effective solution for load switching and power control.

The BSP122,115 is typically used in applications where a P-channel MOSFET is required for switching or amplification. Its low on-resistance minimizes conduction losses, while its fast switching speed reduces switching losses. The logic level compatibility simplifies the design of control circuits, allowing direct interfacing with microcontrollers and other digital devices. The AEC-Q101 qualification ensures reliable operation in harsh environments, such as those found in automotive applications. This MOSFET is a suitable choice for a wide range of applications requiring efficient power control and amplification. Proper gate drive is essential for achieving optimal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2885 $60.0390
33+ $3.5181 $116.0973
51+ $3.4084 $173.8284
71+ $3.2987 $234.2077
91+ $3.1890 $290.1990
122+ $2.8586 $348.7492
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Availability: 54,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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