The Nexperia USA Inc. MOSFET is a P-channel device that offers a drain-source breakdown voltage of 240V and a continuous drain current of 200mA (Ta) @ 25°C.

• Channel Type: P-channel
• Drain-Source Breakdown Voltage: 240V
• Continuous Drain Current: 200mA (Ta) @ 25°C
• Maximum Rds On @ Id,Vgs: 12 Ohm @ 200mA, 10V
• Gate-Source Threshold Voltage: 2.8V @ 1mA
• Package: TO-243AA SOT-89-3
• Operating Temperature Range: -55°C to 150°C (TJ)
• Maximum Input Capacitance: 90pF @ 25V
• Drive Voltage: (Max Rds On, Min Rds On) of 10V
• Category: Discrete semiconductor products
• Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
• Mounting: SMD (SMT) technology