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Same model may have multiple batches, images only for reference.
BUK661R9-40C,118 Real Image
Same model may have multiple batches, images only for reference.

BUK661R9-40C,118

Part No BUK661R9-40C,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A D2PAK
Datasheet
BUK661R9-40C,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 15100pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 306W (Tc)
Maximum Rds On at Id,Vgs 1.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025176-BUK661R9-40C,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK661R9-40C,118 CAD Model

Description

The Nexperia USA Inc. BUK661R9-40C,118 is a N-Channel MOSFET suitable for use in a wide range of applications.

  • Manufacturer: Nexperia USA Inc.
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum Power Dissipation: 306W (Tc)
  • Maximum Rds On: 1.9 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate Charge: 260nC @ 10V
  • Maximum Input Capacitance: 15100pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Use: Suitable for use in discrete semiconductor products
  • Popularity: Medium
  • Status: Balanced

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