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Same model may have multiple batches, images only for reference.
BUK961R4-30E Real Image
Same model may have multiple batches, images only for reference.

BUK961R4-30E

Part No BUK961R4-30E
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, N CH, 30V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-263
Continuous Drain Current (ID) 120 A
Drain to Source Resistance 1 mΩ
Drain to Source Voltage (Vdss) 30 V
Maximum Operating Temperature 175 °C
Max Power Dissipation 357 W
Number of Pins 3
REACH SVHC No SVHC
RoHS Compliant
Threshold Voltage 1.7 V
Win Source Part Number 1050083-BUK961R4-30E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Nexperia USA Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BUK961R4-30E CAD Model

Description

The BUK961R4-30E MOSFET by Nexperia USA Inc. is a three-pin SMD (SMT) component with a drain-to-source voltage (Vdss) of 30 V and a maximum operating temperature of 175 °C.

  • Category: Transistors - FETs, MOSFETs - RF
  • Case/Package: TO-263
  • Continuous Drain Current (ID): 120 A
  • Drain-to-Source Resistance: 1 mΩ
  • Threshold Voltage: 1.7 V
  • RoHS: Compliant
  • SVHC: Does not contain any SVHC
  • Maximum Power Dissipation: 357 W
  • Supply: Currently in short supply
  • Popularity Rating: Low

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