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Same model may have multiple batches, images only for reference.
BUK9Y07-30B,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9Y07-30B,115

Part No BUK9Y07-30B,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A LFPAK
Datasheet
BUK9Y07-30B,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 28.1nC @ 5V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 105W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1025413-BUK9Y07-30B,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9Y07-30B,115 CAD Model

Description

The Nexperia USA Inc. BUK9Y07-30B,115 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 75A @ 25°C.

  • Manufacturer: Nexperia USA Inc.
  • Product Name: BUK9Y07-30B,115
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A @ 25°C
  • Maximum Power Dissipation: 105W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 28.1nC @ 5V
  • Package: LFPAK56, Power-SO8 (SC-100, SOT-669)
  • Application: Discrete semiconductor applications

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