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Same model may have multiple batches, images only for reference.
BUK9Y53-100B,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9Y53-100B,115

Part No BUK9Y53-100B,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 23A LFPAK
Datasheet
BUK9Y53-100B,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 18nC @ 5V
Max Input Capacitance 2130pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 49 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1025427-BUK9Y53-100B,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9Y53-100B,115 CAD Model

Description

The Nexperia USA Inc. 1025427-BUK9Y53-100B,115 is an N-channel MOSFET that is designed to support a maximum power dissipation of 75W (Tc).

  • Category: Discrete Semiconductor Product
  • Package: LFPAK56, Power-SO8
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 23A (Tc)

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