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Same model may have multiple batches, images only for reference.
NX3008PBKW,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

NX3008PBKW,115

Part No NX3008PBKW,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V SOT323
Datasheet
NX3008PBKW,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 0.72nC @ 4.5V
Max Input Capacitance 46pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 260mW (Ta), 830mW (Tc)
Maximum Rds On at Id,Vgs 4.1 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 1084193-NX3008PBKW,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NX3008PBKW,115 CAD Model

Description

The Nexperia USA Inc. NX3008PBKW,115 is a P-channel MOSFET designed for use in low voltage applications.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 200mA
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Gate Charge: 0.72nC @ 4.5V
  • Maximum Input Capacitance: 46pF @ 15V
  • Packaging: Reel
  • Case/Package: SOT-323-3
  • Maximum Junction Temperature: 150°C
  • Product Status: Active

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