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Same model may have multiple batches, images only for reference.
PBLS4002Y,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS4002Y,115

Part No PBLS4002Y,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 6TSSOP
Datasheet
PBLS4002Y,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 40V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V / 150 @ 100mA, 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA
Frequency - Transition 300MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1086373-PBLS4002Y,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS4002Y,115 CAD Model

Description

The PBLS4002Y,115 is a dual NPN and PNP pre-biased transistor in a 6-TSSOP package.

  • Collector-Emitter Breakdown Voltage (NPN): 50V
  • Collector-Emitter Breakdown Voltage (PNP): 40V
  • Applications: Audio amplifiers, voltage regulators, and power management circuits
  • Typical Gain (hFE) @ 10mA, 5V: 30
  • Typical Gain (hFE) @ 100mA, 2V: 150
  • Frequency Transition: 300MHz
  • Maximum Power Dissipation: 300mW

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Quantity Unit Price Ext. Price
320+ $0.1577 $50.4640
775+ $0.1294 $100.2850
1,200+ $0.1254 $150.4800
1,650+ $0.1214 $200.3100
2,135+ $0.1173 $250.4355
2,855+ $0.1052 $300.3460
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