The PBSS4330X115 is a 30 V, 3 A NPN low VCEsat (BISS) transistor from Nexperia. It's designed for use in applications requiring efficient switching and low power dissipation. Its low saturation voltage minimizes losses when the transistor is in the on-state, making it suitable for battery-powered devices and other energy-sensitive applications. This transistor is housed in a small SOT-883 (DFN2020D-3) leadless package.

Applications:

• Loadswitch
• Power management
• Low power DC-DC conversion
• Battery-operated devices
• Relay replacement
• High-speed switching

Features:

• Low collector-emitter saturation voltage (VCEsat)
• High collector current (IC = 3A)
• High current gain (hFE)
• Small SOT-883 leadless package
• AEC-Q101 qualified for automotive applications
• Reduces power dissipation

Benefits:

• Increases energy efficiency due to low VCEsat
• Suitable for high-current switching applications
• Reduces power losses in the on-state
• Saves board space with its small package size
• Suitable for automotive applications due to AEC-Q101 qualification
• Contributes to longer battery life in portable devices

Additional Details:

The PBSS4330X115 utilizes Nexperia's BISS (Breakthrough in Small Signal) technology to achieve its low saturation voltage and high current gain. This results in improved efficiency and performance compared to standard transistors.

Specifications:

• Collector-Emitter Voltage (VCEO): 30 V
• Collector Current (IC): 3 A
• Collector-Emitter Saturation Voltage (VCEsat): Consult datasheet for specific value (e.g., typically
• DC Current Gain (hFE): Consult datasheet for specific value (at specific Ic and Vce)
• Operating Temperature: Consult datasheet for specific value
• Package: SOT-883 (DFN2020D-3)