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Same model may have multiple batches, images only for reference.
PDTA114TU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTA114TU,115

Part No PDTA114TU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT323
Datasheet
PDTA114TU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 200 @ 1mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087161-PDTA114TU,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTA114TU,115 CAD Model

Description

The Nexperia USA Inc. PDTA114TU,115 is a PNP pre-biased transistor with a maximum current collector of 100mA.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 500μA and 10mA
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 200 @ 1mA and 5V
  • Temperature Range: -40°C to 125°C
  • Package: SOT-323-3
  • Maximum Power Dissipation: 200mW
  • Application: Pre-biased PNP transistor

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6,900+ $0.0145 $100.0500
10,715+ $0.0140 $150.0100
14,710+ $0.0136 $200.0560
19,085+ $0.0131 $250.0135
25,425+ $0.0118 $300.0150
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