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Same model may have multiple batches, images only for reference.
PDTC123TT,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC123TT,215

Part No PDTC123TT,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW TO236AB
Datasheet
PDTC123TT,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1087216-PDTC123TT,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC123TT,215 CAD Model

Description

The Nexperia USA Inc. PDTC123TT,215 is a pre-biased NPN transistor that comes in a TO-236AB (SOT23) package.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 30 @ 20mA, 5V
  • Collector Cut-Off Current (Max): 1μA
  • Maximum Power Dissipation: 250mW
  • Low Vce (sat): 150mV @ 500μA, 10mA
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): None

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