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PH3120L,115

Part No PH3120L,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 48.5nC @ 4.5V
Max Input Capacitance 4457pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 2.65 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1087756-PH3120L,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PH3120L,115 CAD Model

Description

The Nexperia USA Inc. PH3120L,115 is a N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 100A @ 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Rds on: 2.65 mOhm @ 25A, 10V
  • Package: LFPAK56, Power-SO8
  • Dimension: SC-100, SOT-669
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 48.5nC @ 4.5V
  • Maximum Input Capacitance: 4457pF @ 10V
  • Power Dissipation: 62.5W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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