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Same model may have multiple batches, images only for reference.
PHD71NQ03LT,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHD71NQ03LT,118

Part No PHD71NQ03LT,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A DPAK
Datasheet
PHD71NQ03LT,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 13.2nC @ 5V
Max Input Capacitance 1220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1087802-PHD71NQ03LT,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHD71NQ03LT,118 CAD Model

Description

The Nexperia PHD71NQ03LT is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 30V and a maximum power dissipation of 120W (Tc).

  • Manufacturer: Nexperia
  • Drain-Source Breakdown Voltage: 30V
  • Power Dissipation: 120W (Tc)
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Package: DPAK
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 5V and 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Production Status: Active
  • Supply and Demand Status: Sufficient

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