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Same model may have multiple batches, images only for reference.
PMBT3904RAZ
Same model may have multiple batches, images only for reference.

PMBT3904RAZ

Part No PMBT3904RAZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description PMBT3904RA/SOT1268/DFN1412-6
Datasheet
PMBT3904RAZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 480mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1412-6
Base Product Number PMBT3904
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377072-PMBT3904RAZ
Ultra Librarian 3D Model Ultra Librarian PMBT3904RAZ CAD Model

Description

The PMBT3904RAZ is a dual NPN bipolar transistor used in discrete semiconductor products.

  • Product: Transistor
  • Manufacturer: Nexperia USA Inc.
  • Type: Bipolar (NPN)
  • Package Type: 6-XFDFN Exposed Pad
  • Mounting Type: Surface Mount
  • Maximum Collector Current: 200mA
  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • DC Current Gain: 100 @ 10mA and 1V
  • Vce Saturation: 300mV @ 5mA and 50mA
  • Maximum Collector Cutoff Current: 50nA
  • Applications: Audio Amplification, Signal Processing, Switching
  • Packaging: Tape and Reel

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