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Same model may have multiple batches, images only for reference.
PMN40UPE,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMN40UPE,115

Part No PMN40UPE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.7A 6TSOP
Datasheet
PMN40UPE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 1820pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta), 8.33W (Tc)
Maximum Rds On at Id,Vgs 43 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089706-PMN40UPE,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMN40UPE,115 CAD Model

Description

The Nexperia USA Inc. BSS84AKS,115 is a dual P-channel FET with a logic level gate.

  • Mounting Type: Surface Mount Device (SMD)
  • Packaging: Reel-TR
  • Maximum Power Dissipation: 445mW
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 160mA
  • Gate-Source Threshold Voltage: 2.1V @ 250μA
  • Maximum Gate Charge: 0.35nC @ 5V
  • Maximum Rds On @ Id,Vgs: 7.5 Ohm @ 100mA, 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1252 $63.7560
70+ $1.7441 $122.0870
105+ $1.6898 $177.4290
145+ $1.6355 $237.1475
185+ $1.5812 $292.5220
245+ $1.4172 $347.2140
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