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Same model may have multiple batches, images only for reference.
PUMD9/ZLZ
Same model may have multiple batches, images only for reference.

PUMD9/ZLZ

Part No PUMD9/ZLZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS
Datasheet
PUMD9/ZLZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Bulk
Product Status Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition 230MHz, 180MHz
Power - Max 300mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMD9
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Win Source Part Number 1086361-PUMD9/ZLZ
Ultra Librarian 3D Model Ultra Librarian PUMD9/ZLZ CAD Model

Description

The PUMD9/ZLZ is a pre-biased bipolar transistor array consisting of one NPN and one PNP transistor.

  • Applications: general-purpose switching and amplification
  • Series: automotive
  • Standard: AEC-Q101
  • Power Dissipation (Max): 300mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Collector Current (Max): 100mA
  • Vce Saturation Voltage (NPN): 100mV @ base current of 250µA and collector current of 5mA
  • Vce Saturation Voltage (PNP): 100mV @ base current of 250µA and collector current of 5mA
  • Operating Temperature (Max): 150°C
  • Mounting: surface mountable
  • Package: 6-TSSOP, SC-88, SOT-363
  • Status: obsolete
  • Standard Package: 1 pcs

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