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Same model may have multiple batches, images only for reference.
2N4398 Microsemi Corporation
Same model may have multiple batches, images only for reference.

2N4398

Part No 2N4398
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 30A TO3
Datasheet
2N4398 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 30 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 4V @ 6A, 30A
Current - Collector Cutoff (Max) 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 2V
Power - Max 5 W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C ~ 200°C
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541178-2N4398
Ultra Librarian 3D Model Ultra Librarian 2N4398 CAD Model

Description

The 541178-2N4398 is a single PNP bipolar transistor, part of the Discrete Semiconductor Products category. This transistor is manufactured by NTE.

  • Category: Discrete Semiconductor Products
  • Transistor Type: PNP Bipolar
  • Application: Amplifying and Switching Electronic Signals
  • Power Rating: 5 W
  • Vce (Collector-Emitter Breakdown Voltage): 40 V
  • Ic (Collector Current): 30 A
  • Vce Saturation: 4V @ 6A, 30A
  • hFE (DC Current Gain): 40 @ 1A, 2V
  • Mounting Type: Through Hole
  • Package: TO-204AA, TO-3
  • Operating Temperature: -65°C to 200°C
  • Product Status: Active
  • Manufacturer: NTE

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