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Same model may have multiple batches, images only for reference.
2N5882 Microsemi Corporation
Same model may have multiple batches, images only for reference.

2N5882

Part No 2N5882
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 15A TO3
Datasheet
2N5882 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 15 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.75A, 15A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 2A, 4V
Power - Max 160 W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541330-2N5882
Ultra Librarian 3D Model Ultra Librarian 2N5882 CAD Model

Description

The 541330-2N5882 is a single NPN transistor, part of the Discrete Semiconductor Products category.

  • Description: Designed for use in various electronic applications that require high power amplification or switching of electrical signals.
  • Power Rating: 160W
  • Voltage Breakdown: 80V
  • Maximum Collector Current: 15A
  • Vce Saturation: 4V @ 3.75A, 15A
  • Package Type: TO-204AA, TO-3
  • Mounting: Through-Hole
  • Operating Temperature: -65°C to 200°C
  • Status: Active

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