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BF1105WR,115

Part No BF1105WR,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 7V DUAL SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity N-Channel Dual Gate
Frequency 800MHz
Gain 20dB
Voltage - Test 5V
Current Rating 30mA
Noise Figure 1.7dB
Voltage Rating 7V
Case / Package CMPAK-4
Win Source Part Number 096618-BF1105WR,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF1105WR,115 CAD Model

Description

The BF1105WR,115 is a state-of-the-art, high-performance silicon MOSFET product from NXP Semiconductors, a leading technology company known for its innovative and reliable solutions in the electronics space. This particular MOSFET is designed to meet the stringent requirements of modern electronic applications, offering a blend of efficiency, precision, and durability.

Key Features

  • Dual Gate MOSFET: The BF1105WR,115 features a dual-gate structure that allows for enhanced control and flexibility in various circuit configurations.
  • Low Noise Figure: With its low noise figure, this device is ideal for high-frequency signal amplification, ensuring clear and precise signal processing.
  • High Gain: The product boasts a high power gain, which is crucial for applications that require signal amplification without significant loss of quality.
  • Integrated Diodes: Protection diodes are integrated into the device to safeguard against electrostatic discharge (ESD), thereby enhancing the longevity and reliability of the MOSFET.

Applications

The BF1105WR,115 is versatile and can be used in a variety of applications, including:

  • High-frequency amplifiers in telecommunications
  • Mixers and oscillators in RF circuits
  • Low-noise blocks in satellite receivers
  • Automotive electronics and systems

Technical Specifications

Some of the technical specifications of the BF1105WR,115 include:

  • Type: N-Channel Dual Gate MOSFET
  • Package: SOT-343R
  • Drain-Source Voltage (Vds): 7 V
  • Gate-Source Voltage (Vgs): ±8 V
  • Drain Current (Id): 30 mA
  • Power Dissipation (Pd): 200 mW
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

NXP's commitment to quality is reflected in the BF1105WR,115, which is manufactured to meet the highest industry standards. Customers can expect a product that not only performs exceptionally but also maintains its performance over a wide range of environmental conditions.

For engineers and designers looking for a robust, high-frequency MOSFET solution, the BF1105WR,115 from NXP Semiconductors is an excellent choice that combines cutting-edge technology with reliability and performance.

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