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BFU550WX

Part No BFU550WX
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 50MA SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz
Gain 18dB
Maximum Power Dissipation 450mW
Typical Gain (hFE) (Min) 60 @ 15mA, 8V
Maximum Current Collector 50mA
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1023267-BFU550WX
Popularity Medium
Supply and Demand Status Limited
Application Field Used in RF Communications, Portable Devices
Ultra Librarian 3D Model Ultra Librarian BFU550WX CAD Model

Description

The BFU550WX is a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP Semiconductors, a leader in the electronic components industry. Designed to provide high performance in a compact package, this NPN wideband silicon germanium carbon (SiGe:C) transistor is tailored for high-frequency applications, making it an ideal choice for a variety of RF amplification and switching tasks.

Key Features

  • High Gain Bandwidth Product: The BFU550WX boasts an impressive gain bandwidth product (fT) of 25 GHz, which ensures excellent performance in high-frequency applications.
  • Low Noise Figure: With a noise figure (NF) as low as 1.1 dB at 1.8 GHz, this transistor provides a clear signal with minimal noise, which is crucial for sensitive RF circuitry.
  • High Maximum Stable Gain (MSG): The device offers a high MSG of 23 dB at 1.8 GHz, allowing for robust amplification of signals without compromising stability.
  • High Linearity: Its outstanding linearity makes it suitable for applications where signal fidelity is paramount, such as in wireless communication systems.

Applications

The BFU550WX's versatility makes it suitable for a broad range of applications, including:

  • Wireless infrastructure for GSM, GPRS, and UMTS networks
  • Global Positioning System (GPS) receivers
  • Low-noise amplifiers (LNAs) in RF front-ends
  • General-purpose RF and microwave amplification
  • High-performance oscillators

Package and Quality

This transistor is housed in a leadless ultra small plastic surface-mounted package, specifically a 1.45 x 1.0 x 0.5 mm 6-pin package, which is designed for optimum thermal performance and space-saving on the PCB. NXP's commitment to quality ensures that the BFU550WX meets the highest standards of reliability and performance, backed by rigorous testing and quality control measures.

Conclusion

The BFU550WX from NXP is a superior choice for designers looking to enhance their RF designs with a transistor that offers high-frequency performance, low noise, and high linearity. Its broad application range and compact form factor make it a versatile and invaluable component in the rapidly evolving landscape of RF technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1721 $58.5140
820+ $0.1409 $115.5380
1,275+ $0.1363 $173.7825
1,755+ $0.1317 $231.1335
2,255+ $0.1282 $289.0910
3,035+ $0.1143 $346.9005
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,000 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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