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BFU610F,115

Part No BFU610F,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANSISTOR NPN SOT343F / Trans RF BJT NPN 5.5V 0.01A 136mW 4-Pin(3+Tab) DFP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 5.5V
Frequency - Transition 15GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain 13.5dB ~ 23.5dB
Power - Max 136mW
DC Current Gain (hFE) (Minimum) @ Ic, Vce 90 @ 1mA, 2V
Current - Collector (Ic) (Maximum) 10mA
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package SOT-343F
Manufacturer Package 4-DFP
Win Source Part Number 769987-BFU610F,115
Popularity Medium
Supply and Demand Status Limited
Family Name BFU610F
Introduction Date June 17, 2010
ECCN EAR99
Country of Origin China, Hong Kong, Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian BFU610F,115 CAD Model

Description

The BFU610F,115 is a state-of-the-art NPN wideband silicon germanium RF transistor designed and manufactured by NXP Semiconductors. This high-performance transistor is tailored for high-frequency applications and is well-suited for a variety of RF circuits and components. The BFU610F,115 is encapsulated in a 4-pin, ultra-small SOT343F (SC-70) surface-mounted package, which ensures a compact footprint on printed circuit boards.

Key Features

  • Frequency Performance: The BFU610F,115 is designed for superior frequency performance, capable of operating in the GHz range, making it an ideal choice for high-frequency and VHF/UHF applications.
  • High Gain: It offers a high power gain, which ensures strong signal amplification necessary for RF signal processing.
  • Low Noise Figure: With its low noise figure, the BFU610F,115 provides excellent signal-to-noise ratio, which is critical for communication systems, sensitive receivers, and precision electronics.
  • High Transition Frequency: The transistor boasts a high transition frequency (fT) that allows for efficient operation at high frequencies.
  • SiGe Technology: Utilizing Silicon Germanium technology, the BFU610F,115 offers a combination of the high-speed operation of Germanium with the stability and manufacturability of Silicon.

Applications

The BFU610F,115 is versatile and can be used in a wide range of applications, including but not limited to:

  • Wireless communication systems
  • Global Positioning System (GPS) receivers
  • Low-noise amplifiers (LNA) for broadcast receivers
  • Oscillators and mixers for RF front-ends
  • Satellite communication systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BFU610F,115 is no exception. It is manufactured under strict quality control standards and is designed to meet the robustness requirements of the most demanding RF applications.

Environmental Compliance

The BFU610F,115 complies with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is manufactured with respect for environmental considerations and is free from hazardous materials.

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