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BUK7E3R1-40E,127-NXP

Part No BUK7E3R1-40E,127-NXP
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description PFET, 100A I(D), 40V, 0.0031OHM, / N-Channel 40 V 100A (Tc) 234W (Tc) Through Hole I2PAK
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 25 V
Power Dissipation (Max) 234W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 1346199-BUK7E3R1-40E,127-NXP
Ultra Librarian 3D Model Ultra Librarian BUK7E3R1-40E,127-NXP CAD Model

Description

The BUK7E3R1-40E,127 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by the renowned semiconductor company, NXP Semiconductors. This power MOSFET is a part of NXP's extensive portfolio of energy-efficient devices and is specifically engineered to deliver optimal performance in a wide range of applications.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device boasts a low on-state resistance which significantly reduces conduction losses, enhancing overall efficiency and performance in power conversion applications.
  • High-Speed Switching: With its fast switching capabilities, the BUK7E3R1-40E,127 is ideal for high-frequency operations, contributing to improved power density and reduced energy waste.
  • Standard Level Gate Drive: This feature makes the MOSFET compatible with standard logic level gate drive voltages, simplifying the interface with control circuits and minimizing the need for additional level shifting components.
  • Robust Thermal Performance: The device is encapsulated in a TO-220AB package, which offers excellent thermal performance and reliability, ensuring stable operation even under high temperature conditions.

Applications

The BUK7E3R1-40E,127 is suitable for a diverse range of applications, including but not limited to:

  • DC/DC converters
  • Power supplies for servers, telecom, and industrial systems
  • Motor drives
  • Automotive systems
  • Load switches

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The BUK7E3R1-40E,127 is subjected to rigorous testing and quality control measures to ensure it performs to specifications under various conditions. With its robust design and NXP's reputation for excellence, this MOSFET is a dependable choice for designers looking to optimize their power management solutions.

Environmental Compliance

The BUK7E3R1-40E,127 is also compliant with RoHS (Restriction of Hazardous Substances) directives, making it an environmentally friendly option for manufacturers aiming to reduce the ecological impact of their products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6932 $59.2620
85+ $1.3895 $118.1075
130+ $1.3467 $175.0710
180+ $1.3028 $234.5040
230+ $1.2590 $289.5700
310+ $1.1296 $350.1760
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,116 pieces
In Stock: 5,558 pieces Factory Stock: 5,558 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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