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MRF6S9130HR3

Part No MRF6S9130HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 880MHZ NI-780 / Trans RF MOSFET N-CH 68V 3-Pin NI-780 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 19.2dB
Voltage - Test 28V
Current - Test 950mA
Power - Output 27W
Voltage Rating DC 68V
Package NI-780
Manufacturer Package NI-780
Win Source Part Number 789447-MRF6S9130HR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF6S9130H
Introduction Date January 11, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF6S9130HR3 CAD Model

Description

Product Overview: MRF6S9130HR3

The MRF6S9130HR3 is a high-performance RF power transistor designed by NXP Semiconductors, a leader in the development of advanced semiconductor solutions. This product is specifically crafted for broadband commercial and industrial applications with frequencies up to 1 GHz. The MRF6S9130HR3 is part of NXP's renowned RF power LDMOS transistor line, which is known for its high power efficiency, reliability, and ruggedness.

Key Features

  • Frequency Range: The MRF6S9130HR3 operates effectively within the DC to 1 GHz spectrum, making it versatile for a variety of RF applications.
  • High Output Power: With a capability of delivering 28 W of continuous wave power, it is well-suited for high-power applications where signal strength is critical.
  • High Gain: The transistor offers a high gain of 18 dB, ensuring that signals are amplified significantly while maintaining clarity and integrity.
  • Efficiency: Exhibiting an efficiency of up to 60%, the MRF6S9130HR3 is engineered for optimal energy usage, reducing operational costs and heat generation.
  • Integrated ESD Protection: Enhanced with integrated electrostatic discharge protection, this device is safeguarded against sudden voltage spikes, enhancing its durability and lifespan.
  • Thermally Enhanced Package: Encased in a thermally efficient package, the MRF6S9130HR3 ensures heat is dissipated effectively, maintaining performance even under high stress conditions.

Applications

The MRF6S9130HR3 is ideal for a wide range of applications, including but not limited to:

  • Broadband RF power amplifiers
  • Industrial, scientific, and medical (ISM) applications
  • Commercial 2-way radio
  • Public safety communications
  • Linear amplifiers

Quality and Reliability

NXP's commitment to quality ensures that the MRF6S9130HR3 meets the highest standards of performance and reliability. Each transistor is meticulously tested to guarantee it operates flawlessly in demanding environments. With its robust construction and NXP's proven track record, the MRF6S9130HR3 is a reliable choice for designers seeking to create powerful, efficient RF systems.

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