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MRF6S9130HSR3

Part No MRF6S9130HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 880MHZ NI-780S / Trans RF MOSFET N-CH 68V 3-Pin NI-780S T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 19.2dB
Voltage - Test 28V
Current - Test 950mA
Power - Output 27W
Voltage Rating DC 68V
Package NI-780S
Manufacturer Package NI-780S
Win Source Part Number 789448-MRF6S9130HSR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF6S9130HS
Introduction Date January 11, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF6S9130HSR3 CAD Model

Description

Product Overview: MRF6S9130HSR3 - NXP

The MRF6S9130HSR3 is a high-performance Radio Frequency (RF) power transistor from the renowned semiconductor manufacturer NXP. This component is designed to deliver exceptional performance in applications that require high power and high efficiency in RF energy generation. The MRF6S9130HSR3 is a part of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, which is well-known for its robustness and reliability in demanding environments.

Key Features:

  • Frequency Range: The MRF6S9130HSR3 operates within a frequency range of 860-960 MHz, making it an ideal choice for applications such as cellular base station amplifiers, broadcast transmitters, and industrial, scientific, and medical (ISM) band applications.
  • High Output Power: With a typical output power of 28 dBm, this transistor can deliver significant power for high-demand systems.
  • High Gain: The device offers a high gain of 18 dB, ensuring efficient signal amplification.
  • High Efficiency: The MRF6S9130HSR3 boasts an impressive efficiency of up to 35%, contributing to reduced operational costs and heat dissipation requirements.
  • Integrated ESD Protection: The transistor comes with built-in Electrostatic Discharge (ESD) protection, enhancing its durability and resistance to unexpected electrical discharges.
  • Ruggedness: It is engineered for toughness and can handle a mismatched load VSWR (@ 28 Vdc, 960 MHz, 70 W CW) of 10:1, without any damage.

Applications:

The versatility of the MRF6S9130HSR3 makes it suitable for a wide range of applications. It is commonly used in RF power amplifiers for cellular base stations, where reliability and efficiency are critical. Additionally, its high power and frequency range make it an excellent choice for broadcast transmitters, including those used in radio and television. The device also finds applications in industrial, scientific, and medical equipment, where precise and powerful RF energy is required.

Quality and Reliability:

NXP's commitment to quality ensures that the MRF6S9130HSR3 meets the highest industry standards for performance and reliability. The product is RoHS compliant and is manufactured under strict quality control processes, making it a trustworthy component for your high-power RF applications.

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