The MRF7S21170HR5 is a high-performance RF power LDMOS transistor designed by NXP Semiconductors. This device is specifically engineered for broadband commercial and industrial applications with frequencies ranging from 2110 to 2170 MHz. With its exceptional versatility, it is an ideal choice for base station applications such as W-CDMA, TD-SCDMA, MC-GSM, and LTE.

Featuring high gain, high efficiency, and a rugged design, the MRF7S21170HR5 is capable of delivering an outstanding output power of 48 dBm (68 Watts) with a 28 V supply voltage. Its high efficiency reduces the overall power consumption, making it a cost-effective solution for high-power RF applications.

The transistor is integrated into a RoHS compliant, surface-mount ceramic package that provides excellent thermal stability and is suitable for a wide range of environmental conditions. The MRF7S21170HR5 also includes gold metallization and polyimide plastics for reliability and longevity.

Key features of the MRF7S21170HR5 include:

• Typical P1dB: 68 Watts CW
• Gain at P1dB: 14 dB
• High Efficiency: 35% (typ)
• Integrated ESD protection
• Excellent thermal performance
• Capable of handling 10:1 VSWR @ 32 Vdc, 68 Watts CW output power
• Characterized from 30 V to 32 V for extended power range
• Designed for linear application

Applications for the MRF7S21170HR5 are diverse and include RF power amplifiers for cellular base stations, broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as RF heating and plasma generation. Its robust design and high efficiency make it an excellent choice for systems requiring high reliability and low maintenance.

Overall, the MRF7S21170HR5 from NXP Semiconductors is a powerful, efficient, and reliable component that meets the demanding requirements of modern RF applications, ensuring optimal performance and long service life.